features marking: 1 h igh diode semiconductor sot- 23 ?? ? electrical characteristics (ta =25 unless otherwise specified b3 1ss1 84 swi tching diodes sot-23 plastic-encap sulate diodes low forward voltage fast reverse recovery time 1 2 3 applications ?? extreme fast switches 1 2 3 non - repetitive peak r everse v oltage v rm 85 v dc blo ckin g voltage v r 80 v forw a rd continuous current i fm 300 ma av e rage rectified output current i o 100 ma pow e r dissipation p d 150 mw junc tion t emperature t j 150 f or w ard s urge c urrent @ t =8.3 ms i fsm 2.0 a non - repetitive peak parameter symbol limit unit st o rage t emperature r ange t st g -55 ~+ 150 t h e rmal resistance from junction to ambient r ja /w 833 parameter sy mbol min typ max unit conditions reve rse b reakdown v oltage v (br ) 80 v i r =100 a v f1 0.60 v i f =1ma v f2 0.72 v i f =10ma forw a rd voltage v f3 0.9 1.2 v i f =100ma i r1 0.1 ua v r =30v rev e rse current i r2 0.5 ua v r =80v capacita nce between terminals c t 0.9 3.0 pf v r =0,f=1mhz rev e rse recovery time t rr 1.6 4.0 ns i f =i r =10ma,i rr =0.1 i r
h l j k ' l r g h 6 h p l f r q g x f w r u 7 \ s l f d o & k d u d f w h u l v w l f v 0 25 50 75 100 125 150 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 020406080 1 10 100 1000 0 5 10 15 20 0.8 0.9 1.0 1.1 1.2 forward characteristics reverse characteristics power derating curve power dissipation p d (mw) ambient temperature ta ( ) 30 0.03 0.3 3 300 t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) ta=100 ta=25 reverse current i r (na) reverse voltage v r (v) 30 3 ta=25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf)
jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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